The study suggests that the elastic stress increases with crystallization due to the smaller elastic modulus of a-Si with respect to crystalline silicon (c-Si). It was observed that the crystallization was affected by the stress in a-Si films introduced by the Si3N4 cap layer. The Si3N4 films were also deposited by rf sputtering.
The stress in an a-Si film was controlled by thickness of a Si3N4 cap layer. The a-Si films were deposited on Si3N4 (50 nm)/Si(100) substrate by rf sputtering. N2 - Solid phase crystallization of an amorphous silicon (a-Si) film stressed by a Si3N4 cap was studied by laser Raman spectroscopy. T1 - The model of solid phase crystallization of amorphous silicon under elastic stressĬopyright 2017 Elsevier B.V., All rights reserved. The experimental data was fitted by this model and the difference of the enthalpy ΔHac between a-Si and c-Si which is the latent heat of crystallization obtained by the fitting showed good coincidence with the previously reported value.", It is most reasonable to think that the elastic stress does not relax and that the elastic energy increased with crystallization because the elastic modulus of a-Si is smaller than that of c-Si. The experimental data was fitted by this model and the difference of the enthalpy ΔH ac between a-Si and c-Si which is the latent heat of crystallization obtained by the fitting showed good coincidence with the previously reported value.Ībstract = "Solid phase crystallization of an amorphous silicon (a-Si) film stressed by a Si3N4 cap was studied by laser Raman spectroscopy. It was observed that the crystallization was affected by the stress in a-Si films introduced by the Si 3N 4 cap layer. The Si 3N 4 films were also deposited by rf sputtering. The stress in an a-Si film was controlled by thickness of a Si 3N 4 cap layer. The a-Si films were deposited on Si 3N 4 (50 nm)/Si(100) substrate by rf sputtering. Solid phase crystallization of an amorphous silicon (a-Si) film stressed by a Si 3N 4 cap was studied by laser Raman spectroscopy.